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1. produc t profile 1.1 g eneral description plan ar m a ximum ef ficie n cy gene ra l ap plicatio n (mega) schottky barr ier rec t ifier with an in te gr ated gu ar d rin g fo r str e ss p r o t e c tio n , e n cap s ulate d in a lea d less u l tra small sod1 608 ( d fn160 8d-2 ) sur f a c e-m oun ted devi ce (smd) p l astic p a cka ge with visible a nd solde r a b le side p a ds. 1.2 features and benefit s ? a v er age fo rwar d cu rr en t: i f(a v ) 0.5 a ? rever s e vo lt ag e: v r 40 v ? l o w for w ar d vo lt ag e v f 59 0 mv ? lo w re ve rse c u r r e n t ? aec-q10 1 qua lifie d ? so lder ab le sid e p ads ? pa ckag e he ight typ . 0.37 m m ? ultra small and leadless smd plastic p a ckage 1.3 a pplications ? low volt age rectification ? hig h ef ficie n c y d c -t o- dc con v e r s i on ? switch mode power supply ? le d bac k light for mobil e applic ation ? l o w power co nsump t ion ap plication s ? ultra h i gh-spe ed switchin g ? reve rse po lar i ty pr otectio n 1.4 q u i ck referen ce d at a [1] d evice mo unted on a cer amic printed-c i r c uit board (pcb), al 2 o 3 , st andard footprint. PMEG4005EPK 40 v , 0.5 a low vf mega schottky barrier rectifier rev. 2 ? 6 march 2012 product data sheet table 1. quick re feren ce d a t a symbol pa rame ter conditions min typ max unit i f( a v ) ave r a g e fo rw ar d curr ent = 0.5; f = 20 khz; t amb 115 c; square wave [1] --0 .5a = 0 .5; f = 20 khz; t sp 140 c; sq uare wa ve --0 . 5 a v r re verse vo lt age t j = 2 5 c --4 0 v v f forwa r d vo lt age i f = 500 ma; pu lsed; t p 300 s; ? 0.0 2 ; t j =2 5 c - 530 590 mv i r reverse c u rrent v r =1 0v ; t j = 2 5 c - 0.4 2 a t rr reverse r e covery time i r =0 . 5 a; i f = 0 .5 a; i r( me as) =0 . 1 a; t j =2 5 c -2 -n s http://
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 2 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 2. pinning information [1] t he markin g bar indicate s the catho de. 3. ordering information 4. marking t abl e 2. pi nn in g i n fo rmati on pin symbol description simplified outline g r ap hi c sy m b o l 1 k cathode [1] sod1608 (dfn1608d-2) 2 a anod e 12 transparent top view sym001 12 table 3. ordering information type number package name description ve r s i o n PMEG4005EPK dfn1608d-2 leadless ultra small plastic package; 2 terminals sod1608 table 4. marking codes type number m a rk in g c o de PMEG4005EPK 0010 0000 fig 1. sod1608 binary marking code description vendor code marking code (example) cathode bar reading direction reading direction reading example: 0111 1011 006aac909
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 3 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 5. limiting values [1] d evice mo unted on a cer amic printed-c i r c uit board (pcb), al 2 o 3 , st andard footprint. [2] d evice mo unted on an f r 4 pcb, single- sided copper , tin- plate d and st andar d footpr int. [3] r eflow soldering is th e only r ecommen ded solder ing method. [4] d evice mo unted on an f r 4 pcb, single- sided copper , tin- plate d, mounting p ad fo r cathode 1 cm 2 . 6. thermal characteristics [1] f or schott k y b a rrier diodes t hermal r unaway has to be cons ider ed, as in some applications the r ever s e pow er losses p r ar e a sig nificant p ar t of the to t al p ower losses. [2] d evice mo unted on an f r 4 pcb, single- sided copper , tin- plate d and st andar d footpr int. [3] r eflow soldering is th e only r ecommen ded solder ing method. [4] d evice mo unted on an f r 4 pcb, single- sided copper , tin- plate d, mounting p ad fo r cathode 1 cm 2 . [5] d evice mo unted on a cer a mic pcb, al 2 o 3 , st anda rd footpr in t. [6] s oldering point of cathode t ab. t a ble 5. l i miting v a lues in acco rd ance with th e absolu te m a xi m u m ra ting s yste m ( iec 60 13 4 ) . symbol parameter conditions min max unit v r re verse vo lt age t j =2 5 c - 4 0 v i f forwa r d cu rrent t sp 13 5 c - 0 . 7 a i f( a v ) ave r a g e fo rwar d cur r ent = 0 .5; f = 20 khz; square wave; t am b 11 5 c [1] -0 . 5 a = 0 .5; f = 20 khz; square wave; t sp 14 0 c -0 . 5 a i frm re petitive pea k forwa r d cu rre n t t p 1 ms; ? 0.25 - 2 a i fsm n on-rep e titive peak forward curr ent t p =8m s ; t j(in it) = 2 5 c; squa re wa ve - 3 a p to t tot a l po wer dissip a ti on t am b 25 c [2] [3] - 390 mw [4] [3] - 830 mw [1] [3] - 147 0 m w t j junction tempe r atu r e - 150 c t am b a m bien t temperature - 55 150 c t stg storag e te mp erature -65 150 c t a ble 6. t hermal characteristics symbol parameter conditions min typ max unit r th( j -a ) therm a l r e sist ance from junc tion t o a m bien t i n f r ee air [1] [2] [3] - - 320 k/w [1] [4] [3] - - 150 k/w [1] [5] [3] --8 5k/w r th(j- s p) therm a l r e sist ance from junc tion t o solder po i nt [6] --2 0 k / w
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 4 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier f r 4 pcb, st anda rd foo t p r int fi g 2. tra n s i e n t th erma l i m pe da nc e from ju nc tio n t o a m bi e n t a s a fu nc ti on of pu ls e du rati on ; ty pi c a l v a l u e s f r 4 pcb, mou n ti ng p a d for cathode 1 cm 2 fi g 3. tra n s i e n t th erma l i m pe da nc e from ju nc tio n t o a m bi e n t a s a fu nc ti on of pu ls e du rati on ; ty pi c a l v a l u e s 006aad010 t p (s) 10 -3 10 2 10 3 10 1 10 -2 10 -1 10 2 10 3 z th(j-a) (k/w) 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.02 0.01 0 0.05 006aad01 1 t p (s) 10 -3 10 2 10 3 10 1 10 -2 10 -1 10 2 10 3 z th(j-a) (k/w) 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.02 0.01 0 0.05
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 5 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 7. characteristics ceramic pcb , al 2 o 3 , st an dard footprin t fi g 4. tra n s i e n t th erma l i m pe da nc e from ju nc tio n t o a m bi e n t a s a fu nc ti on of pu ls e du rati on ; ty pi c a l v a l u e s 006aad012 t p (s) 10 -3 10 2 10 3 10 1 10 -2 10 -1 10 2 z th(j-a) (k/w) 10 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 0.02 0.01 0 0.05 table 7. characteristics symbol parameter conditions min typ max unit v f forwa r d vo lt age i f = 100 ma; pu lsed; t p 300 s; ? 0.0 2 ; t j =2 5 c - 380 420 mv i f = 500 ma; pu lsed; t p 300 s; ? 0.0 2 ; t j =2 5 c - 530 590 mv i r reverse c u rrent v r =1 0v ; t j = 2 5 c - 0.4 2 a v r =4 0v ; t j =2 5 c - 2 1 0 a c d d i od e ca p acit ance v r = 1 v ; f = 1 mhz; t j = 25 c - 30 35 pf v r =1 0v ; f=1m h z ; t j = 25 c - 10 15 pf t rr reverse r e covery time i f = 0 .5 a ; i r = 0 .5 a; i r( me as) =0 . 1 a; t j =2 5 c -2 -n s v frm p eak forward recove ry volt age i f = 0 .5 a ; di f /d t = 20 a/ s; t j = 25 c - 545 - m v
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 6 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier (1) t j = 1 50 c (2) t j = 1 25 c (3) t j = 85 c (4) t j = 25 c (5) t j = ? 40 c (1) t j = 1 25 c (2) t j = 85 c (3) t j = 25 c (4) t j = ? 40 c fi g 5. fo rwa r d c u rre nt as a func ti on o f fo rw a r d voltag e; typica l valu e s f i g 6. re ver se cu rren t a s a fu n c tio n o f re vers e vo ltag e; typica l va lu es f = 1 m h z ; t am b = 25 c t j = 150 c (1) = 0. 1 (2) = 0. 2 (3) = 0. 5 (4) = 1 f i g 7 . diod e cap ac itan ce as a fu nction of rev e rse voltag e; typica l valu e s f i g 8. av era g e for w ar d po wer dissip a tio n as a function of average fo rwa rd curre nt; typica l valu e s 006aad013 v f (v) 0.0 1.2 0.8 0.4 10 -2 10 -3 1 10 -1 10 i f (a) 10 -4 (1) (2) (3) (4) (5) 006aad014 10 -3 10 -4 10 -5 10 -6 10 -7 10 -8 10 -9 10 -10 i r (a) 10 -1 1 v r (v) 04 0 30 10 20 (1) (2) (3) (4) v r (v) 04 0 30 10 20 006aad015 20 30 10 40 50 c d (pf) 0 006aad016 i f(a v) (a) 0.00 0.75 0.50 0.25 0.2 0.1 0.3 0.4 p f(a v) (w) 0.0 (1) (2) (3) (4)
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 7 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier t j = 125 c (1) = 1 (2) = 0 .9 (3) = 0 .8 (4) = 0 .5 f r4 pcb, st and ard fo otprint t j = 150 c (1) = 1 (dc) (2) = 0. 5; f = 20 khz (3) = 0. 2; f = 20 khz (4) = 0.1; f = 20 khz f i g 9 . av erag e rev e rse p o wer d i s s ipation as a fun ctio n o f re ver se vo ltag e; typica l va lu es f i g 10. av era g e for w ar d cu rre nt as a fun ction o f amb i e n t temp era t u r e; typ i c a l va lu es f r 4 pcb, mou n ti ng p a d for cathode 1 cm 2 t j = 150 c (1) = 1 (dc) (2) = 0.5; f = 20 khz (3) = 0.2; f = 20 khz (4) = 0.1; f = 20 khz ceramic pcb, al 2 o 3 , st a ndard foot pri n t t j = 150 c (1) = 1 (dc) (2) = 0. 5; f = 20 khz (3) = 0. 2; f = 20 khz (4) = 0. 1; f = 20 khz fi g 11 . a ve ra ge fo rwa r d c u rre nt as a f unc ti on of amb i e n t tempe ratu re; typ i ca l va lu es f i g 12. av era g e for w ar d curre nt as a fun ction o f amb i e n t temp era t u r e; typ i c a l va lu es v r (v) 04 0 30 10 20 006aad017 0.02 0.03 0.01 0.04 0.05 p r(a v) (w) 0.00 (1) (2) (3) (4) t amb (c) 0 50 100 150 175 125 75 25 006aad018 0.25 0.50 0.75 i f(a v) (a) 0.00 (1) (2) (3) (4) t amb (c) 0 50 100 150 175 125 75 25 006aad019 0.25 0.50 0.75 i f(a v) (a) 0.00 (1) (2) (3) (4) t amb (c) 0 50 100 150 175 125 75 25 006aad020 0.25 0.50 0.75 i f(a v) (a) 0.00 (1) (2) (3) (4)
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 8 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 8. t e st information t j = 150 c (1) = 1 (dc) (2) = 0.5; f = 20 khz (3) = 0.2; f = 20 khz (4) = 0.1; f = 20 khz fi g 13 . a ve ra ge fo rwa r d c u rre nt as a f unc ti on of s o ld e r po in t te mpe r atu r e; ty pic a l va lu e s t sp (c) 0 50 100 150 175 125 75 25 006aad021 0.25 0.50 0.75 i f(a v) (a) 0.00 (1) (2) (3) (4) fig 14. reverse recovery definition time i f i r t rr i r(meas) 006aad022
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 9 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier the current ratings for the ty pical wavefor m s a r e calcu l ated accor d in g to the equ ation s : i f( a v) = i m with i m d e fined as p eak cur r en t, i rm s = i f( a v) a t dc, an d i rms = i m ? with i rms defin ed as rm s cur r e n t. 8. 1 q u ali ty i n formation th is p r od uct h a s b e e n qua lified in accor d ance w ith the aut o motive electronics council (aec) standard q101 - stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. fig 1 5 . f orward rec o ve ry de finition f i g 1 6 . du t y cycle d e fin i tio n 001aab912 time time v frm v f i f v f t p t cy p t 006aac658 duty cycle = t p t cy
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 10 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 9. package outline 10 . s olderi ng f i g 1 7 . p ac kag e ou tline sod160 8 (dfn1 608 d-2) dimensions in mm 1.65 1.55 0.04 0.85 0.75 0.75 0.67 0.40 0.34 0.80 0.72 0.40 0.32 11-11-21 1 2 fig 18. reflow soldering footprint for sod1608 (dfn1608d-2) 0.9 0.7 0.8 1.15 1.05 0.95 1.9 1.8 0.1 0.2 12 2.0 0.75 0.65 0.55 0.9 0.7 0.8 occupied area solder land solder resist solder land plus solder paste solder paste deposit dimensions in mm footprint information for reflow soldering of sod1608 package sod1608 sod1608_fr
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 11 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 1 1 . r evision history t a ble 8. re visio n h i s t o ry document id release date data sheet status change notice supersedes pmeg4005 epk v . 2 2012 030 6 p ro duct d a t a sh eet - p meg400 5epk v . 1 modifications: ? fig 14. and 15 : corrected title PMEG4005EPK v.1 20120306 product data sheet - -
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 12 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier 12. l egal information 12.1 d at a sh eet st atus [1 ] pl e a s e consu l t th e m o st r e ce ntl y i ssu ed do cum e n t be fo re i n i ti a t i n g o r com p l e ti ng a d e si g n . [2 ] t he te rm 'sh o r t d a t a sh ee t' i s exp l ai ne d i n sect io n " d efi n it io ns" . [ 3 ] t h e p r o d u c t s t at u s o f d e v ic e( s ) de s c r ib ed in t h is do c u me n t ma y ha v e c h an g e d s i nc e th is do c u men t w a s p u b lis h e d an d ma y dif f e r in ca se o f m u ltip le d e vice s. the lat e st p r odu ct st atu s info rm a tion i s ava i la ble on the in ter n e t a t urlh ttp: //www .n xp.co m . 12.2 d efinitions pr evi ew ? the documen t is a pr eview ver s i on only . the docume n t is s t ill subject t o f o rmal app roval, w h ich ma y resul t in modif i cat i ons or add itio ns. nxp se mico nduct ors does not g i ve a ny re presen t a t i ons or warra nti e s as to th e accu racy or compl ete ness of inf ormat i on in cl uded he rein and sha ll h ave no liab ilit y f o r th e c o nsequen c e s of use o f such i n fo rmat i on. dr a f t ? t h e d o cument is a dra f t version o n ly . t h e con t e n t is s t ill und er int e rn al review and subje c t to f o rmal ap proval, which m a y re su lt in modif i cat i ons or add itio ns. nxp se miconduct o rs does not g i ve a n y rep resent a t io ns o r wa rrant ies as t o t he accu racy or compl e te ness o f inf o rma tio n in c l u ded her ein and shall hav e no liab ilit y fo r t he consequ ences o f use of such inf o rmat i on . short dat a s h e e t ? a short d a t a sheet i s an extr act fro m a fu ll d a t a sheet wit h th e sa me p r odu ct type numb er(s) and t i t l e. a shor t dat a she et is int ende d f or quick re fer ence on ly and sh ould n ot be re lied upon to co nt ain det ailed and f ull inf orma tio n. for det ailed an d ful l in fo rmat i on see th e r elevant fu ll d at a sheet , which is a v ai lable on r eque st via t he local nxp s e micondu ct ors sales of fice. in case of a ny incon s ist ency or conf lict w i th th e shor t d at a sh eet , th e f ull d at a sheet sh all prevai l. p r o d u ct sp ec if i c a t io n ? th e i nfo rmat i on and da t a pro v id ed in a prod uct dat a she et shal l d efi ne the spe c if icat ion of the pr oduct a s agr eed be tween nxp se mico nduct ors and it s cu st omer , u n less nx p s e micond uctor s an d custome r have explicit ly ag reed ot her wis e i n wri t in g. i n no event h owever , shall an ag reemen t be valid in which t he nxp semi co nduct ors p r odu ct is dee med to of f er fu nctio ns an d quali t ie s beyon d t ho s e de scri bed in th e pro duct da t a sh eet . 12.3 d isclaimers li mi te d wa rr a n ty an d li a b il it y ? in for m ati on in thi s docume nt is belie ve d to be accurat e and re liabl e. however , nxp s emicondu ct ors doe s not give any rep resent a t io ns o r wa rrant ies, e x p ressed or implie d, as to t he accuracy or completen e ss of such informa tio n a nd shall have no lia bility for the consequ ences o f use of such inf o rmat i on . nxp se mico nduct ors t akes no respo n sibilit y f o r t he c o nt ent in t h is documen t if pr ovided by an inf o rmat i on source out si de of nxp s emicondu ct ors. in n o e v e nt shall nxp s emicond uctor s be lia ble fo r a ny in dire ct , in cid ent a l , pun itive, spe c i a l or consequ ent ial damag es (inclu ding - wit hou t limit a t io n - lost prof it s , lost savings, business int e rrupt ion, cost s related t o the remov a l or rep l acement of an y pro duct s o r rework ch arge s) whe t he r or not such dama ges a r e based on t ort ( i ncludi ng negli gence) , warra nty , bre ach of cont ract or an y ot her le gal th eory . not with s t andin g a n y d a mages th at cust omer might incur fo r any r eason what soe v e r , nxp semi co nduct ors? ag greg at e and cumulat i ve l i abil i ty t oward s custome r for t he pro duct s d escr i bed he rein shall be li mite d i n a c cor dance with the t e rms and cond iti ons o f commercial sale o f nxp se miconduct o rs. right to m ake changes ? nxp semi co nduct ors r eserves t he ri ght t o make ch ange s t o i nfo rmat i on pub lished in t his d ocument , in cl uding wit hou t limit a t io n spe c i f icat ion s and pr oduct d e scr i pt ions, at any time an d wi tho u t not ice. this documen t su persed e s an d r eplaces all inf o rmat i on supp lied pri o r to t he pub licati on here of. suit abi l i t y f o r use i n automoti ve a p p l i cati ons ? t h is nxp s emicond uctor s prod uct has been q ualif ied f o r use in aut omot ive appli c a t io ns. unless ot herwise agr eed in writ ing, the p r odu ct i s not design ed, a uth orized or warran t e d t o be suit a b le fo r use i n l i fe supp ort , lif e-crit ical or saf e ty-cri tical syst ems or eq uipme n t, nor in app licat ions w h ere f a ilur e o r ma lfu n ctio n of an nxp semicon duct ors p r odu ct ca n r easona bly b e e x p ecte d t o result in person a l injur y , de at h o r sever e prope rty or envir onment al damag e. nxp semicon ducto rs a nd it s suppli e rs acce pt no l i abil i ty fo r inclusion a nd/ or use of nxp semicon duct ors p r odu ct s in such equip m ent o r a pplicat ion s and th eref ore such inclusion a nd/ or use is at the cust omer' s o w n r i sk. qui ck re fer ence dat a ? t h e q u i ck r e fe r e nc e d a t a i s an ex tr a c t of th e prod uct dat a g i ven in th e l i miti ng va lues and char acter i stics sect ions of t h is documen t, a nd as such is not comp l ete , exhau st ive or lega lly b i ndin g. ap plic ation s ? app licat ions tha t are desc rib ed her ein fo r a ny o f th ese prod uct s ar e for il lustra tive pu rpos es only . nxp se mico nduct o rs makes no repr esent a t io n o r wa rran t y tha t such a pplication s will be suit a b le for the specifi ed use w i tho ut f urt her t esti ng or modif i cat i on. custome rs ar e responsib le for t he desig n a nd ope rat i on of t hei r a pplicat ion s and pr oduct s using nxp s emicondu ct or s pro duct s, and nxp semi conduct ors acce pt s no liabi lity fo r any a s sist a n ce wit h app licati ons o r cu st omer pr oduct design . it is cust omer ? s sol e r e sponsib ilit y t o d e t e rmine whe t he r t h e nxp semicon ducto rs p r odu ct is sui t able a nd f i t f or t he custome r ? s a pplicat ion s an d prod uct s pl anne d, as well as f o r t he plan ned app licati on and use of cu st ome r ? s t h ird p a rt y cust omer( s ) . custo mers sho u ld pro v id e appro p ria t e design an d o pera t in g saf eg uard s t o min i mize the r i sks asso cia t e d wit h t heir appl ica t io ns a nd prod uct s . nxp semicon duct o rs d oes n o t accept any liabil i ty rela ted t o any def ault , damag e, cost s o r probl em wh ich is based on a n y weakne ss or def aul t in th e cu st ome r ? s ap plicat ions or prod uct s , or t he appl ica t io n o r use b y custo m er ? s th ird p a rt y custo mer(s). c u st omer is respo n sible f o r doing a ll n e cessa ry te st ing f o r th e cu st omer ? s app lic at ions and pro duct s u s i ng nxp semicon ducto rs p r oduct s in orde r to av oid a de fau l t of the ap plicat ions and th e p r odu ct s or of t he ap plicat ion or use by cu st omer ? s t hird p art y cu st ome r(s). nxp d oes n ot accept a n y liab ilit y in t h is r e sp ec t. li mi ting v a l ues ? s t r ess abo ve o ne or more limit ing valu es (a s de fine d in th e a b solut e maximum rati ngs s y s t em of i e c 6013 4) will c a use p e rman ent damag e t o the device. li miti ng va lues are stre ss rat i ngs onl y and (prope r) oper ati on of t he device at t hese or an y ot her cond iti ons a bove th ose g i ven in th e re co mm e nded o perat ing con dit ions se ct ion (if presen t) or t he document status [1] [2 ] product status [3] de fini ti o n obje ct ive [sho rt] dat a shee t d e v e l opmen t t hi s docume n t cont ains dat a f rom th e object i ve sp ecificat ion f or pro duct de ve lopmen t. preli minary [sho rt] dat a shee t q uali f ic at ion t hi s docume nt cont ains dat a f r om th e preli m inary sp ecifi c a t io n. product [short] data sheet production this doc ument contains the product specification.
p m eg 40 05ep k al l info r m atio n pr ov ide d in thi s d o cu ment is su bje c t t o le gal dis c l a i m er s. ? nx p b . v . 201 2. al l r i ght s r e se r v ed. product data sheet rev. 2 ? 6 march 2012 13 of 14 nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier chara c t e r i st ics sect ions of t h is document is no t warra nt ed. con s t ant o r rep eat ed exposure t o limit ing value s will per manen tly and irr e versibly af fect th e quali t y and reli abili ty of t he device. terms and conditions of commercial sale ? nxp semiconductors products are sold subject to the gener al terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , un less ot he rwise agr eed in a va lid writ te n i ndividu al agree ment . i n case an in dividua l agr eement is conclu ded onl y t he ter m s an d con d it ions of t he respect i ve agr eement sh all app ly . nx p s e micond uctor s her eby expressly o b ject s to app lyi ng th e cust omer ? s gene ral t erms a nd co ndit i ons wit h r egar d t o th e pur ch ase o f nxp se mico nduct o rs produ ct s by cu st ome r . no o f fer to sel l or l i ce n s e ? no thi ng in t his do cu ment may be int er pret ed o r constr ued as an o f f er to se ll pro duct s t hat is op en f o r a c cep t ance or t he g rant , conveyance or impli c a t io n o f any licens e und er any co pyright s, p ate nt s o r ot her ind u stri al or int e llect ual pro pert y r i ght s. export con t r o l ? this docume n t as well as t he it em(s) describe d here i n may be subject t o expor t cont rol reg u lat i ons. e x p o rt mig h t re quire a pr ior aut hori z a t io n f r o m compe t en t aut hor iti es. t r ansl ati o ns ? a non-e ngli s h (t ran s l ate d) version of a d ocument i s f or ref e ren c e o n ly . t h e e ngli s h version sha ll p revail in case of an y discrep an cy bet ween t he tr anslat ed and e nglish versions. 12.4 t r ad emarks noti ce : all r efe renced b r ands, prod uc t name s , service names and t rad emarks are t he prop ert y of the i r respect i ve o w ners. a d el an te , bitpor t , bit s o und , coolfl ux , cor e use , desfi r e , ez- h v , fabkey , g re en c h i p , h i pe rs mar t , hit a g , i2c- bu s l ogo, ic ode , i-code , it ec , labelu t i on , mif are , mif a r e p l us , mi f are u l tral ight , moreuse , ql p a k , si lic on t uner , si lic on m a x , sm a r t x a , st ar plug , t o pfet , t r en ch m o s , tr i m e d i a an d uc ode ? ar e tra demarks of nxp b . v . hd radio and hd radio logo ? are trademarks of ibiquity digital corporation. 13. c ont act information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com
nxp semiconductors PMEG4005EPK 40 v, 0.5 a low vf mega schottky barrier rectifier ? nxp b . v . 20 12 . a l l r i g h t s re se rv ed. for m o r e i n for m a t i o n , plea se visit: htt p :// w ww.n x p.co m for sale s of fice a d d r e sses, plea se se nd an ema i l t o : s a lesa ddre sses@ nxp . com date of release: 6 march 2012 document identifier: PMEG4005EPK please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 14. c ontent s 1 p rod u ct profi le . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 g ener a l description . . . . . . . . . . . . . . . . . . . . . . 1 1.2 f eatures and benef i t s . . . . . . . . . . . . . . . . . . . . . 1 1.3 a pplications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 q uick ref e rence dat a . . . . . . . . . . . . . . . . . . . . . 1 2 p i n n ing i n fo rmatio n . . . . . . . . . . . . . . . . . . . . . . . 2 3 o rd eri n g in formatio n . . . . . . . . . . . . . . . . . . . . . . 2 4 m arking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 l imiti n g val u es . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6 t hermal characteri s tics . . . . . . . . . . . . . . . . . . . 3 7 c h a ract eristics . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 t est inf o rmati on . . . . . . . . . . . . . . . . . . . . . . . . . . 8 8.1 q ualit y information . . . . . . . . . . . . . . . . . . . . . . . 9 9 p ackag e ou tlin e . . . . . . . . . . . . . . . . . . . . . . . . . 1 0 10 so ld erin g . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 0 1 1 revi sion h istory . . . . . . . . . . . . . . . . . . . . . . . . . 1 1 12 l e g a l i n fo rmatio n . . . . . . . . . . . . . . . . . . . . . . . . 1 2 12. 1 dat a sheet st at us . . . . . . . . . . . . . . . . . . . . . . . 1 2 12. 2 def i nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 12. 3 dis c laimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 12. 4 t r ademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 13 co nt act i n fo rmatio n . . . . . . . . . . . . . . . . . . . . . .13

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